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Subjects : Electrical and Electronics

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Electrical and Electronics

Question 1Single Answer
At temperature of 298 Kelvin, Silicon is not suitable for most-electronic applications, due to small amount of conductivity. This can be altered by
  1. A
    Gettering
  2. B
    Doping
  3. C
    Squeezing
  4. D
    Sintering
Question 2Single Answer
By doping Germanium with Gallium, the types of semi-conductors formed are
1. N type
2. P type
3. Intrinsic
4. Extrinsic
  1. A
    1 and 4
  2. B
    2 and 4
  3. C
    1 and 3
  4. D
    2 and 3
Question 3Single Answer
An n-type of silicon can be formed by adding impurity of:
1. Phosphorous
2. Arsenic
3. Boron
4. Aluminum 
Which of the above are correct ?
  1. A
    1 and 2
  2. B
    2 and 3
  3. C
    3 and 4
  4. D
    1 and 4
Question 4Single Answer
According to Einstein’s relationship for a semiconductor, the ratio of diffusion constant to the mobility of the charge carriers is
  1. A
    Variable and is twice the volt equivalent of the temperature
  2. B
    Constant and is equal to the volt equivalent of the temperature
  3. C
    Equal to two and is twice the volt equivalent of the temperature
  4. D
    Equal to one and is equal to the volt equivalent of the temperature
Question 5Single Answer
Swept-out voltage in PIN diode happens when PIN diode is
  1. A
    Forward biased and the thickness of the depletion layer decreases till I-region becomes free of mobile carriers
  2. B
    Reverse biased and the thickness of the depletion layer increases till I-region becomes free of mobile carriers
  3. C
    Forward biased and the thickness of the depletion layer increases till I-region becomes free of mobile carriers
  4. D
    Reverse biased and the thickness of the depletion layer decreases till I-region becomes free of mobile carriers
Question 6Single Answer
The number of holes in an N-type silicon with intrinsic value 1.5 × 1010/cm3 and doping concentration of 1017/cm3, by using mass-action law is
  1. A
    6.67 × 106/cc
  2. B
    4.44 × 10-25/cc
  3. C
    1.5× 10-24/cc
  4. D
    2.25 × 103/cc
Question 7Single Answer
A tunnel-diode is best suited for
  1. A
    Very low frequencies
  2. B
    50 Hz
  3. C
    100 Hz
  4. D
    Microwave frequencies
Question 8Single Answer
Small recovery time of a diode is most significant for
  1. A
    Line-frequency rectification
  2. B
    Switching operations
  3. C
    High-frequency rectifications and switching operations
  4. D
    Low-frequency rectifications and switching operations
Question 9Single Answer
In JFET, when operated above the pinch-off voltage, the
  1. A
    Depletion region becomes smaller
  2. B
    Drain current starts decreasing
  3. C
    Drain current remains practically constant
  4. D
    Drain current increases steeply
Question 10Single Answer
Thermal runaway is not possible in FET because, as the temperature of FET increases
  1. A
    The drain current increases
  2. B
    The mobility of charge carriers decreases
  3. C
    The mobility of charge carriers increases
  4. D
    The transconductance increases
Question 11Single Answer
Consider the following statements regarding an N-P-N Bipolar Junction Transistor:
1. Emitter diode is forward biased and collector diode is reverse biased
2. Emitter has many free electrons
3. Free electrons are injected into base and pass through collector
4. Depletion layers around junction J1 and J2 of BJT are widened 
    Which of the above statements are correct?
  1. A
    1, 2 and 4
  2. B
    1, 3 and 4
  3. C
    2, 3 and 4
  4. D
    1, 2 and 3
Question 12Single Answer
A freewheeling diode T phase controlled rectifier
  1. A
    Improves the line power factor
  2. B
    Enables inverse operation
  3. C
    Is responsible for additional reactive power
  4. D
    Is responsible for additional harmonics
Question 13Single Answer
The zeners incorporated within the encapsulations of some MOSFETs are meant for
  1. A
    Reducing the cost
  2. B
    Biasing the gate circuit
  3. C
    Self-protecting the device against transients
  4. D
    None of the above
Question 14Single Answer
When UJT is used for triggering an SCR, the wave-shape of the signal obtained from UJT circuit is
  1. A
    Sine wave
  2. B
    Saw tooth wave
  3. C
    Trapezoidal wave
  4. D
    Square wave
Question 15Single Answer
Darlington pairs are frequently used in linear ICs because, they
  1. A
    Do not require any capacitors or inductors
  2. B
    Have enormous impedance transformation capability
  3. C
    Can be readily formed/hooked from two adjacent transistors
  4. D
    Resemble emitter follower
Question 16Single Answer
In a MOS capacitance fabricate on a P-type semiconductor, strong inversion occurs, when potential is
  1. A
    Equal to Fermi level
  2. B
    Zero
  3. C
    Negative and equal to Fermi potential in magnitude
  4. D
    Positive and equal to Fermi potential in magnitude
Question 17Single Answer
A CMOS amplifier when compared to an N channel MOSFET has the advantage of
  1. A
    Higher cutoff frequency
  2. B
    Higher voltage gain
  3. C
    Higher current gain
  4. D
    Lower power dissipation
Question 18Single Answer
Consider the following statements regardingoptocouplers:
1. Optocouplers are LEDs driving photodiodes in a single package to provide electrical isolation between input and output
2. Optocouplers is LED driving a phototransistor in a single package that replaces pulse transformers working at input zero crossing
3. Optocouplers are used as temporary non fixed joints between optical fibre terminations 
  Which of the above statements are correct?
  1. A
    1, 2 and 3
  2. B
    1 and 2 only
  3. C
    1 and 3 only
  4. D
    2 and 3 only
Question 19Single Answer
Which of the following does not cause permanent damage to an SCR ?
  1. A
    High current
  2. B
    High rate of rise of current
  3. C
    High temperature rise
  4. D
    High rate of rise of voltage
Question 20Single Answer
The basic structure of an avalanche photodiode is
  1. A
    p+ – i – p – n+
  2. B
    p+ – I – n+
  3. C
    p+ – p- – n+
  4. D
    i – p- – n+
Question 21Single Answer
A five digits number is formed using the digits 1, 3, 5, 7 and 9 without repeating any of them. What is the sum of all such possible five digit numbers ?
  1. A
    6666660
  2. B
    6666600
  3. C
    6666666
  4. D
    6666606
Question 22Single Answer
Examples of an active display and a passive display respectively are
  1. A
    LCD and Gas discharge plasma
  2. B
    LED and LCD
  3. C
    Gas discharge plasma and LED
  4. D
    Electrophoretic Image display and LED
Question 23Single Answer
The dc resistivity and permeability exhibited by a type 1 superconductor are respectively
  1. A
    Zero and zero
  2. B
    Zero and unity
  3. C
    Unity and zero
  4. D
    Unity and unity
Question 24Single Answer
Statement (I):One of the mechanisms by which a transistor’s usefulness may be terminated, as the collector voltage is increased, is called punch through.
Statement (II): Punch through results from the increased width of the collector-junction transition region with increased collector-junction voltage
  1. A
    Both Statement (I) and Statement (II) are individually true and Statement (II) is the correct explanation of Statement (I)
  2. B
    Both Statement (I) and Statement (II) are individually true and Statement (II) is NOT the correct explanation of Statement (I)
  3. C
    Statement (I) is true but Statement (II) is false
  4. D
    Statement (I) is false but Statement (II) is true
Question 25Single Answer
Statement (I): Conduction takes place in an enhancement MOSFET only for gate voltages below the threshold level.
Statement (II):In an enhancement MOSFET, a channel of semiconductor of the same type as the source and drain is induced in the substrate by a positive voltage applied to the gate.
  1. A
    Both Statement (I) and Statement (II) are individually true and Statement (II) is the correct explanation of Statement (I)
  2. B
    Both Statement (I) and Statement (II) are individually true and Statement (II) is NOT the correct explanation of Statement (I)
  3. C
    Statement (I) is true but Statement (II) is false
  4. D
    Statement (I) is false but Statement (II) is true
Question 26Single Answer
Resistance switching is normally resorted in case of
  1. A
    Air blast CB
  2. B
    Bulk oil CB
  3. C
    Minimum oil CB
  4. D
    All types of CB
Question 27Single Answer
By transmitting power at high voltage
  1. A
    it will give poor voltage regulation
  2. B
    it will give better voltage regulation
  3. C
    it will not effect voltage regulation
  4. D
    None of these
Question 28Single Answer
Which statement about the daily load curve is valid ?
  1. A
    The area under the curve gives the average demand
  2. B
    The ratio of the area under the curves to the total area of rectangle in which it is contained gives the load factor for the day
  3. C
    The peak of the curve gives the installed capacity of the plant
  4. D
    The area of the curves divided by the number of hours gives load factor
Question 29Single Answer
High voltage Schring bridge is used to measure
  1. A
    large capacitance without additional element
  2. B
    small capacitance without additional element
  3. C
    medium value capacitance
  4. D
    None of these
Question 30Single Answer
Draw - in - system of laying underground cables has the drawback (s) of
  1. A
    higher cost
  2. B
    reduced current carrying capacity of the cables
  3. C
    requirements of much deeper and wider trenches
  4. D
    repairs, alterations or additions difficult
  5. E
    all of the above except
Question 31Single Answer
Surge impedance of a transmission line is
  1. A
    independent of its length
  2. B
    dependent on its length
  3. C
    independent on its temperature
  4. D
    none of the above
Question 32Single Answer
If two synchronous generators connected in parallel loose synchronism, it will lead to
  1. A
    stalling of generators
  2. B
    wild fluctuations in current
  3. C
    wild fluctuations in current and voltage
  4. D
    None of these
Question 33Single Answer
A differential relay responds to
  1. A
    algebraic difference of two or more similar electrical quantities
  2. B
    vector difference of two or more similar electrical quantities
  3. C
    algebraic difference between two currents
  4. D
    algebraic difference between two voltages
Question 34Single Answer
The conductor carries more current on the surface in comparison to its core. This phenomenon is called the
  1. A
    Skin effect
  2. B
    Corona
  3. C
    Ferranti effect
  4. D
    Lenz's effect
Question 35Single Answer
A booster is connected in
  1. A
    series with the feeder
  2. B
    parallel with the feeder
  3. C
    both (a) and (b) are correct
  4. D
    none of these
Question 36Single Answer
Fuses have got advantages of
  1. A
    cheapest type of protection
  2. B
    inverse time - current characteristic
  3. C
    no maintenance
  4. D
    current limiting effect under short - circuit conditions
  5. E
    all of the above
Question 37Single Answer
The power transmitted will be maximum when
  1. A
    line reactance is high
  2. B
    corona losses are minimum
  3. C
    sending end voltage is more
  4. D
    receiving end voltage is more
Question 38Single Answer
The connected load of a consumer is 2 kW and his maximum demand is 1.5 kW. The load factor of the consumer is
  1. A
    0.75
  2. B
    0.375
  3. C
    1.33
  4. D
    None of these
Question 39Single Answer
In a transformer, the exciting current will be in phase quadrature with the impressed voltage provided
  1. A
    only the leakage impedance drop is ignored
  2. B
    only the core loss is ignored
  3. C
    both the leakage impedance drop and the core loss are ignored
  4. D
    only the no - load copper loss is ignored
Question 40Single Answer
Which of the following techniques is used for the measurements of a.c. high frequency voltages ?
  1. A
    Peak voltmeter
  2. B
    Series resistance mircro - ammeter
  3. C
    Resistance potential divider
  4. D
    All of these
Question 41Single Answer
Use of additional shunt capacitor can be made for increasing the capability of line as it
  1. A
    reduces surge impedance Z0
  2. B
    increases phase shift β
  3. C
    increase in α
  4. D
    all of the above
Question 42Single Answer
The sag of a transmission line is least affected owing to
  1. A
    weight of the conductor
  2. B
    current through the conductor
  3. C
    atmospheric temperature
  4. D
    ice deposited on the conductor
Question 43Single Answer
In case of Impulse Thermal break down of solid insulating materials, the critical electric field is proportional to
  1. A
    critical absolute temperature
  2. B
    square of critical absolute temperature
  3. C
    square of T0
  4. D
    none of these
Question 44Single Answer
The insulation of the modern EHV lines is designed based on
  1. A
    corona
  2. B
    switching voltages
  3. C
    lightning voltage
  4. D
    all of these
Question 45Single Answer
For constant voltage transmission, the voltage drop along the line is maintained constant by installing
  1. A
    capacitors
  2. B
    inductors
  3. C
    resistors
  4. D
    synchronous phase modifiers at the receiving end
Question 46Single Answer
AC network analyser is employed for solving the problems of
  1. A
    load flow
  2. B
    load flow and stability
  3. C
    load flow and short - circuit
  4. D
    load flow, stability and short - circuit
Question 47Single Answer
The change in excitation in an alternator connected to an infinite line provides a corresponding change in
  1. A
    terminal voltage
  2. B
    speed of rotor
  3. C
    power generated
  4. D
    power factor
Question 48Single Answer
Different types of insulators used for transmission lines are
  1. A
    pin type only
  2. B
    suspension type only
  3. C
    strain type only
  4. D
    pin type, suspension type and shackle type
Question 49Single Answer
The conductor connecting consumer's terminals to the distributor is called the
  1. A
    feeder
  2. B
    distributor
  3. C
    service main
  4. D
    none of the above
Question 50Single Answer
Which of the following method or techniques can be used for the measurement of high d.c. voltages ?
  1. A
    Generating voltmeter
  2. B
    Electrostatic voltmeter
  3. C
    Peak voltmeter
  4. D
    Half effect generators
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