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Latest BEL Trainee Engineer Exam Question (Objective Questions), MCQ in English

Subjects : Technical Subject (Electronics), General Aptitude

Question Bank BEL Trainee Engineer (Electronics) Exam - English
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Technical Subject (Electronics)

Question 1Single Answer
If a square matrix of order 100 has exactly 15 distinct eigenvalues, then the degree of the minimum polynomial is 
  1. A
    At least 15 
  2. B
    At most 15 
  3. C
    Always 15 
  4. D
    Exactly 100
Question 2Single Answer
For high speed reading and storing of information in a computer, the core shall be of 
  1. A
    Ferrite 
  2. B
    Piezoelectric 
  3. C
    Pyroelectric 
  4. D
    Ferromagnetic above 768°C
Question 3Single Answer
Soft magnetic materials should have 
  1. A
    Large saturation magnetization and large permeability 
  2. B
    Low saturation magnetization and large permeability 
  3. C
    Large saturation magnetization and low permeability 
  4. D
    Low saturation magnetization and low permeability 
Question 4Single Answer
Orbital magnetic moment of an electron, in an atom, is of the order of 
  1. A
    0.1 Bohr magneton 
  2. B
    1.0 Bohr magneton 
  3. C
    10 Bohr magneton 
  4. D
    100 Bohr magneton
Question 5Single Answer
When the temperature of a ferromagnetic material exceeds the Curie temperature, it behaves similar to a 
  1. A
    Diamagnetic material 
  2. B
    Ferrimagnetic material 
  3. C
    Paramagnetic material 
  4. D
     Antiferromagnetic material
Question 6Single Answer
What is the correct sequence of the following materials in ascending order of their resistivity ?
1. Iron
2. Silver
3. Constantan
4. Mica
5. Aluminium
Select the correct answer using the codes given below : 
  1. A
    2, 5, 1, 3 and 4 
  2. B
    4, 5, 3, 1 and 2 
  3. C
    2, 3, 1, 5 and 4 
  4. D
    4, 5, 1, 3 and 2
Question 7Single Answer
In the first Cauer network, with a pole at infinity, the first element must be
  1. A
    Series capacitor 
  2. B
    Series inductor 
  3. C
    Shunt capacitor 
  4. D
    Shunt inductor
Question 8Single Answer
The total magnetic moment
1. is called saturation magnetization.
2. depends on the number of magnetic dipoles per unit volume, the instant electric current and the area of the current loop.
Which of the above statements is/are correct ? 
  1. A
    1 only 
  2. B
    2 only 
  3. C
    Both 1 and 2 
  4. D
    Neither 1 nor 2
Question 9Single Answer
Susceptibility of a diamagnetic material is 1. Negative
2. Positive
3. Dependent on the temperature
4. Independent of the temperature 
  1. A
    1 and 2 only 
  2. B
    1 and 3 only 
  3. C
    2 and 3 only      
  4. D
    1, 2 and 3
Question 10Single Answer
Superconductivity is a material property associated with 
  1. A
    Changing shape by stretching 
  2. B
    Stretching without breaking 
  3. C
    A loss of thermal resistance 
  4. D
    A loss of electrical resistance
Question 11Single Answer
Which one of the following helps experimental confirmation of the Crystalline state of matter?
  1. A
    Shock compression
  2. B
    Photo emission
  3. C
    Conductivity measurements
  4. D
    X-ray diffraction
Question 12Single Answer
The electrical conductivity of pure semiconductor is:
  1. A
    Proportional to temperature
  2. B
    Increases exponentially with temperature
  3. C
    Decreases exponentially with temperature
  4. D
    Not altered with temperature
Question 13Single Answer
Consider the following statements pertaining to the resistance of a conductor:
1. Resistance can be simply defined as the ratio of voltage across the conductor to the current through the conductor. This is, in fact, Georg Ohm’s law.
2. Resistance is a function of voltage and current.
3. Resistance is a function of conductor geometry and its conductivity
Which of the above statements are correct?
  1. A
    1 and 2 only
  2. B
    2 and 3 only
  3. C
    1 and 3 only
  4. D
    1, 2 and 3
Question 14Single Answer
The ratio of ionic radii of Cations i.e.and that of Anions i.e.for stable and unstable ceramic crystal structure, is:
  1. A
    Less than unity
  2. B
    Greater than unity
  3. C
    Unity
  4. D
    Either lesser or greater than unity
Question 15Single Answer
Which one of the following statements is correct?
  1. A
    For insulators the band-gap is narrow as compared to semiconductors
  2. B
    For insulators the band-gap is relatively wide whereas for semiconductors it is narrow
  3. C
    The band-gap is narrow in width for both the insulators and conductors
  4. D
    The band-gap is equally wide for both conductors and semiconductors
Question 16Single Answer
In an extrinsic semiconductor the conductivity significantly depends upon:
  1. A
    Majority charge carriers generated due to impurity doping
  2. B
    Minority charge carriers generated due to thermal agitation
  3. C
    Majority charge carriers generated due to thermal agitation
  4. D
    Minority charge carriers generated due to impurity doping
Question 17Single Answer
In some substances when an electric field is applied the substance become polarized. The electrons and nucleii assume new geometrical positions and the mechanical dimensions are altered. This phenomenon is called:
  1. A
    Electrostriction
  2. B
    Hall-Effect
  3. C
    Polarization
  4. D
    Magnetization
Question 18Single Answer
In ferromagnetic materials, the net magnetic moment created due to magnetization by an applied field as:
  1. A
    Normal to the applied field
  2. B
    Adds to the applied field
  3. C
    In line with magneto motive force
  4. D
    Subtracts from the applied field
Question 19Single Answer
At what temperatures domains lose their ferromagnetic properties?
  1. A
    Above ferromagnetic Curie temperature
  2. B
    Below paramagnetic Curie temperature
  3. C
    Above 4
  4. D
    At room temperature
Question 20Single Answer
Which of the following materials does not have paramagnetic properties?
1. Rare earth elements (with incomplete shell)
2. Transition elements
3. Magnesium oxide
Select the correct answer from the codes given below:
  1. A
    1 only
  2. B
    2 only
  3. C
    3 only
  4. D
    1 and 2
Question 21Single Answer
Which of the following regions of operation are mainly responsible for heating of the transistor under switching operation?
1. Saturation region
2. Cut-off region
3. Transition from saturation to cut-off
4. Transition from cut-off to saturation
Select the correct answer using the codes given below
  1. A
    1, 2 and 4 only
  2. B
    1, 3 and 4 only
  3. C
    2 and 3 only
  4. D
    1 and 3 only
Question 22Single Answer
In a sinusoidal oscillator, sustained oscillations will be produced only if the loop gain (at the oscillation frequency) is
  1. A
    Less than unity but not zero
  2. B
    Zero
  3. C
    Unity
  4. D
    Greater than unity
Question 23Single Answer
The Class-B push-pull amplifier is an efficient two –transistor circuit, in which the two transistors operate in the following way:
  1. A
    Both transistors operate in the active region throughout the negative ac cycle
  2. B
    Both transistors operate in the active region for more than half-cycle but less than a whole cycle
  3. C
    One transistor conducts during the positive half-cycle and the other during the negative half-cycle
  4. D
    Full supply voltage appears across each of the transistors
Question 24Single Answer
PAC stands for______.
  1. A
    Permanent angle converter
  2. B
    Phase angle converter
  3. C
    Phase angle components
  4. D
    Phase angle capacitor
  5. E
    None of these
Question 25Single Answer
For normal operation of a transistor
  1. A
    Forward bias the emitter diode and reverse bias the collector diode
  2. B
    Forward bias the emitter diode as well as the collector diode
  3. C
    Reverse bias the emitter diode as well as the collector diode
  4. D
    Reverse bias the emitter diode and forward bias the collector diode
Question 26Single Answer
Consider the following statements regarding linear power supply:
1. It requires low frequency transformer.
2. It requires high frequency transformer.
3. The transistor works in active region.
Which of the above statements is/are correct?
  1. A
    1 only
  2. B
    2 and 3 only
  3. C
    1 and 3 only
  4. D
    3 only
Question 27Single Answer
A full wave rectifier connected to the output terminals of the mains transformer produces an RMS voltage of 18 V across the secondary. The no-load voltage across the secondary of the transformer is
  1. A
    1.62 V
  2. B
    16.2 V
  3. C
    61.2 V
  4. D
    6.12 V
Question 28Single Answer
MICR stands for______.
  1. A
    Magnetic Ink Chart Receipt
  2. B
    Magnetic Ink Character Recognition
  3. C
    Magnetic Ink Chart Recognition
  4. D
    Magnetic Ink capacitor Reverse
  5. E
    None of these
Question 29Single Answer
In an Op-Amp, if the feedback voltage is reduced by connecting a voltage divider at the output, which of the following will happen?
1. Input impedance increases
2. Output impedance increases
3. Overall gain increases
Which of the above statements is/are correct?
  1. A
    1 only
  2. B
    2 only
  3. C
    3 only
  4. D
    1, 2 and 3
Question 30Single Answer
The transient response rise time (unity gain) of an Op-Amp is 0.05s.The small signal bandwidth is
  1. A
    7 kHz
  2. B
    20 kHz
  3. C
    7 MHz
  4. D
    20 MHz
Question 31Single Answer
Consider the following statements:
The output of a linear circuit, driven with a sine wave at a frequency f, is itself a sine wave
1. at the same frequency
2. with chance of changed amplitude
3. with chances of changed amplitude and phase
Which of the above statements is/are correct? 
  1. A
    1 and 2
  2. B
    1 only
  3. C
    1 and 3
  4. D
    2 only 
Question 32Single Answer
Consider the following statements:
The main contribution to photo conduction is by
1. the generation of electron and hole pair by a photon
2. a donor electron jumping into the conduction band because of a photon’s energy
3. a valence electron jumping into an acceptor state because of a photon’s energy Which of the above statements is/are correct? 
  1. A
    1 only
  2. B
    2 only
  3. C
    3 only
  4. D
    1, 2 and 3
Question 33Single Answer
Thermal runaway is not possible in FET because as the temperature of the FET increase
  1. A
    mobility decreases
  2. B
     trans-conductance increases
  3. C
    drain current increases
  4. D
    trans-conductance decreases
Question 34Single Answer
For the same network, with 6 V DC connected at port A, 1 Ω connected at port B draws 7/3 A. if 8 V DC is connected to port A, the open circuit voltage at port B is
  1. A
    6 V
  2. B
    7 V
  3. C
    8 V
  4. D
    9 V
Question 35Single Answer
A signal may have frequency components which lie in the range of 0.001 Hz to 10 Hz. Which one of the following types of couplings should be chosen in a multistage amplifier designed to amplify the signal? 
  1. A
    Capacitor coupling
  2. B
    Direct coupling
  3. C
    Transformer coupling
  4. D
    Double-tuned transformer coupling
Question 36Single Answer
If an input impedance of op-amp is finite, then which one of the following statements related to virtual ground is correct ? 
  1. A
    Virtual ground condition may exist.
  2. B
    Virtual ground condition cannot exist
  3. C
    In case of op-amp, virtual ground condition always exists.
  4. D
    Cannot make a valid declaration 
Question 37Single Answer
Hysteresis is desirable in a Schmitt-trigger because 
  1. A
    energy is to be stored/discharged in parasitic capacitances
  2. B
    effects of temperature variations would be compensated
  3. C
    devices in the circuit should be allowed time for saturating and de-saturation
  4. D
    it would prevent noise from causing false triggering 
Question 38Single Answer
In a photoconductive cell the resistance, of the semiconductor material varies with intensity of incident light. 
  1. A
    directly
  2. B
    inversely 
  3. C
    exponentially
  4. D
    logarithmically 
Question 39Single Answer
In graded index multimode optical fiber the refractive index of the core is
  1. A
    uniform across its radial distance except for the cladding
  2. B
    maximum at the fiber axis and decreased stepwise towards the cladding
  3. C
    maximum at the fiber axis and decreases gradually towards the cladding.
  4. D
    maximum at the fiber axis and increases stepwise towards the cladding
Question 40Single Answer
Consider the following factors:
1. Number of turns of the coil
2. Length of the coil
3. Area of cross-section of the coil
4. Permeability of the core
On which of the above factors does inductance, depend?
  1. A
    1, 2 and 3 only
  2. B
    1, 3 and 4 only
  3. C
    1, 2, 3 and 4
  4. D
    2 and 4 only 
Question 41Single Answer
At temperature of 298 Kelvin, Silicon is not suitable for most-electronic applications, due to small amount of conductivity. This can be altered by
  1. A
    Gettering
  2. B
    Doping
  3. C
    Squeezing
  4. D
    Sintering
Question 42Single Answer
By doping Germanium with Gallium, the types of semi-conductors formed are
1. N type
2. P type
3. Intrinsic
4. Extrinsic
  1. A
    1 and 4
  2. B
    2 and 4
  3. C
    1 and 3
  4. D
    2 and 3
Question 43Single Answer
An n-type of silicon can be formed by adding impurity of:
1. Phosphorous
2. Arsenic
3. Boron
4. Aluminum 
Which of the above are correct ?
  1. A
    1 and 2
  2. B
    2 and 3
  3. C
    3 and 4
  4. D
    1 and 4
Question 44Single Answer
According to Einstein’s relationship for a semiconductor, the ratio of diffusion constant to the mobility of the charge carriers is
  1. A
    Variable and is twice the volt equivalent of the temperature
  2. B
    Constant and is equal to the volt equivalent of the temperature
  3. C
    Equal to two and is twice the volt equivalent of the temperature
  4. D
    Equal to one and is equal to the volt equivalent of the temperature
Question 45Single Answer
Swept-out voltage in PIN diode happens when PIN diode is
  1. A
    Forward biased and the thickness of the depletion layer decreases till I-region becomes free of mobile carriers
  2. B
    Reverse biased and the thickness of the depletion layer increases till I-region becomes free of mobile carriers
  3. C
    Forward biased and the thickness of the depletion layer increases till I-region becomes free of mobile carriers
  4. D
    Reverse biased and the thickness of the depletion layer decreases till I-region becomes free of mobile carriers
Question 46Single Answer
The number of holes in an N-type silicon with intrinsic value 1.5 × 1010/cm3 and doping concentration of 1017/cm3, by using mass-action law is
  1. A
    6.67 × 106/cc
  2. B
    4.44 × 10-25/cc
  3. C
    1.5× 10-24/cc
  4. D
    2.25 × 103/cc
Question 47Single Answer
A tunnel-diode is best suited for
  1. A
    Very low frequencies
  2. B
    50 Hz
  3. C
    100 Hz
  4. D
    Microwave frequencies
Question 48Single Answer
Small recovery time of a diode is most significant for
  1. A
    Line-frequency rectification
  2. B
    Switching operations
  3. C
    High-frequency rectifications and switching operations
  4. D
    Low-frequency rectifications and switching operations
Question 49Single Answer
In JFET, when operated above the pinch-off voltage, the
  1. A
    Depletion region becomes smaller
  2. B
    Drain current starts decreasing
  3. C
    Drain current remains practically constant
  4. D
    Drain current increases steeply
Question 50Single Answer
Thermal runaway is not possible in FET because, as the temperature of FET increases
  1. A
    The drain current increases
  2. B
    The mobility of charge carriers decreases
  3. C
    The mobility of charge carriers increases
  4. D
    The transconductance increases
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