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Latest CNP Nashik Junior Technician Exam Question (Objective Questions), MCQ in English

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Question Bank CNP Nashik Junior Technician (Electronics) Exam - English
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Electronics

Question 1Single Answer
Which one of the following helps experimental confirmation of the Crystalline state of matter?
  1. A
    Shock compression
  2. B
    Photo emission
  3. C
    Conductivity measurements
  4. D
    X-ray diffraction
Question 2Single Answer
The electrical conductivity of pure semiconductor is:
  1. A
    Proportional to temperature
  2. B
    Increases exponentially with temperature
  3. C
    Decreases exponentially with temperature
  4. D
    Not altered with temperature
Question 3Single Answer
Consider the following statements pertaining to the resistance of a conductor:
1. Resistance can be simply defined as the ratio of voltage across the conductor to the current through the conductor. This is, in fact, Georg Ohm’s law.
2. Resistance is a function of voltage and current.
3. Resistance is a function of conductor geometry and its conductivity
Which of the above statements are correct?
  1. A
    1 and 2 only
  2. B
    2 and 3 only
  3. C
    1 and 3 only
  4. D
    1, 2 and 3
Question 4Single Answer
The ratio of ionic radii of Cations i.e.and that of Anions i.e.for stable and unstable ceramic crystal structure, is:
  1. A
    Less than unity
  2. B
    Greater than unity
  3. C
    Unity
  4. D
    Either lesser or greater than unity
Question 5Single Answer
Which one of the following statements is correct?
  1. A
    For insulators the band-gap is narrow as compared to semiconductors
  2. B
    For insulators the band-gap is relatively wide whereas for semiconductors it is narrow
  3. C
    The band-gap is narrow in width for both the insulators and conductors
  4. D
    The band-gap is equally wide for both conductors and semiconductors
Question 6Single Answer
In an extrinsic semiconductor the conductivity significantly depends upon:
  1. A
    Majority charge carriers generated due to impurity doping
  2. B
    Minority charge carriers generated due to thermal agitation
  3. C
    Majority charge carriers generated due to thermal agitation
  4. D
    Minority charge carriers generated due to impurity doping
Question 7Single Answer
In some substances when an electric field is applied the substance become polarized. The electrons and nucleii assume new geometrical positions and the mechanical dimensions are altered. This phenomenon is called:
  1. A
    Electrostriction
  2. B
    Hall-Effect
  3. C
    Polarization
  4. D
    Magnetization
Question 8Single Answer
In ferromagnetic materials, the net magnetic moment created due to magnetization by an applied field as:
  1. A
    Normal to the applied field
  2. B
    Adds to the applied field
  3. C
    In line with magneto motive force
  4. D
    Subtracts from the applied field
Question 9Single Answer
At what temperatures domains lose their ferromagnetic properties?
  1. A
    Above ferromagnetic Curie temperature
  2. B
    Below paramagnetic Curie temperature
  3. C
    Above 4
  4. D
    At room temperature
Question 10Single Answer
Which of the following materials does not have paramagnetic properties?
1. Rare earth elements (with incomplete shell)
2. Transition elements
3. Magnesium oxide
Select the correct answer from the codes given below:
  1. A
    1 only
  2. B
    2 only
  3. C
    3 only
  4. D
    1 and 2
Question 11Single Answer
Consider the following statements:
The output of a linear circuit, driven with a sine wave at a frequency f, is itself a sine wave
1. at the same frequency
2. with chance of changed amplitude
3. with chances of changed amplitude and phase
Which of the above statements is/are correct? 
  1. A
    1 and 2
  2. B
    1 only
  3. C
    1 and 3
  4. D
    2 only 
Question 12Single Answer
Consider the following statements:
The main contribution to photo conduction is by
1. the generation of electron and hole pair by a photon
2. a donor electron jumping into the conduction band because of a photon’s energy
3. a valence electron jumping into an acceptor state because of a photon’s energy Which of the above statements is/are correct? 
  1. A
    1 only
  2. B
    2 only
  3. C
    3 only
  4. D
    1, 2 and 3
Question 13Single Answer
Thermal runaway is not possible in FET because as the temperature of the FET increase
  1. A
    mobility decreases
  2. B
     trans-conductance increases
  3. C
    drain current increases
  4. D
    trans-conductance decreases
Question 14Single Answer
For the same network, with 6 V DC connected at port A, 1 Ω connected at port B draws 7/3 A. if 8 V DC is connected to port A, the open circuit voltage at port B is
  1. A
    6 V
  2. B
    7 V
  3. C
    8 V
  4. D
    9 V
Question 15Single Answer
A signal may have frequency components which lie in the range of 0.001 Hz to 10 Hz. Which one of the following types of couplings should be chosen in a multistage amplifier designed to amplify the signal? 
  1. A
    Capacitor coupling
  2. B
    Direct coupling
  3. C
    Transformer coupling
  4. D
    Double-tuned transformer coupling
Question 16Single Answer
If an input impedance of op-amp is finite, then which one of the following statements related to virtual ground is correct ? 
  1. A
    Virtual ground condition may exist.
  2. B
    Virtual ground condition cannot exist
  3. C
    In case of op-amp, virtual ground condition always exists.
  4. D
    Cannot make a valid declaration 
Question 17Single Answer
Hysteresis is desirable in a Schmitt-trigger because 
  1. A
    energy is to be stored/discharged in parasitic capacitances
  2. B
    effects of temperature variations would be compensated
  3. C
    devices in the circuit should be allowed time for saturating and de-saturation
  4. D
    it would prevent noise from causing false triggering 
Question 18Single Answer
In a photoconductive cell the resistance, of the semiconductor material varies with intensity of incident light. 
  1. A
    directly
  2. B
    inversely 
  3. C
    exponentially
  4. D
    logarithmically 
Question 19Single Answer
In graded index multimode optical fiber the refractive index of the core is
  1. A
    uniform across its radial distance except for the cladding
  2. B
    maximum at the fiber axis and decreased stepwise towards the cladding
  3. C
    maximum at the fiber axis and decreases gradually towards the cladding.
  4. D
    maximum at the fiber axis and increases stepwise towards the cladding
Question 20Single Answer
Consider the following factors:
1. Number of turns of the coil
2. Length of the coil
3. Area of cross-section of the coil
4. Permeability of the core
On which of the above factors does inductance, depend?
  1. A
    1, 2 and 3 only
  2. B
    1, 3 and 4 only
  3. C
    1, 2, 3 and 4
  4. D
    2 and 4 only 
Question 21Single Answer
At temperature of 298 Kelvin, Silicon is not suitable for most-electronic applications, due to small amount of conductivity. This can be altered by
  1. A
    Gettering
  2. B
    Doping
  3. C
    Squeezing
  4. D
    Sintering
Question 22Single Answer
By doping Germanium with Gallium, the types of semi-conductors formed are
1. N type
2. P type
3. Intrinsic
4. Extrinsic
  1. A
    1 and 4
  2. B
    2 and 4
  3. C
    1 and 3
  4. D
    2 and 3
Question 23Single Answer
An n-type of silicon can be formed by adding impurity of:
1. Phosphorous
2. Arsenic
3. Boron
4. Aluminum 
Which of the above are correct ?
  1. A
    1 and 2
  2. B
    2 and 3
  3. C
    3 and 4
  4. D
    1 and 4
Question 24Single Answer
According to Einstein’s relationship for a semiconductor, the ratio of diffusion constant to the mobility of the charge carriers is
  1. A
    Variable and is twice the volt equivalent of the temperature
  2. B
    Constant and is equal to the volt equivalent of the temperature
  3. C
    Equal to two and is twice the volt equivalent of the temperature
  4. D
    Equal to one and is equal to the volt equivalent of the temperature
Question 25Single Answer
Swept-out voltage in PIN diode happens when PIN diode is
  1. A
    Forward biased and the thickness of the depletion layer decreases till I-region becomes free of mobile carriers
  2. B
    Reverse biased and the thickness of the depletion layer increases till I-region becomes free of mobile carriers
  3. C
    Forward biased and the thickness of the depletion layer increases till I-region becomes free of mobile carriers
  4. D
    Reverse biased and the thickness of the depletion layer decreases till I-region becomes free of mobile carriers
Question 26Single Answer
The number of holes in an N-type silicon with intrinsic value 1.5 × 1010/cm3 and doping concentration of 1017/cm3, by using mass-action law is
  1. A
    6.67 × 106/cc
  2. B
    4.44 × 10-25/cc
  3. C
    1.5× 10-24/cc
  4. D
    2.25 × 103/cc
Question 27Single Answer
A tunnel-diode is best suited for
  1. A
    Very low frequencies
  2. B
    50 Hz
  3. C
    100 Hz
  4. D
    Microwave frequencies
Question 28Single Answer
Small recovery time of a diode is most significant for
  1. A
    Line-frequency rectification
  2. B
    Switching operations
  3. C
    High-frequency rectifications and switching operations
  4. D
    Low-frequency rectifications and switching operations
Question 29Single Answer
In JFET, when operated above the pinch-off voltage, the
  1. A
    Depletion region becomes smaller
  2. B
    Drain current starts decreasing
  3. C
    Drain current remains practically constant
  4. D
    Drain current increases steeply
Question 30Single Answer
Thermal runaway is not possible in FET because, as the temperature of FET increases
  1. A
    The drain current increases
  2. B
    The mobility of charge carriers decreases
  3. C
    The mobility of charge carriers increases
  4. D
    The transconductance increases
Question 31Single Answer
In intrinsic semiconductors, the Fermi level lies?
  1. A
    At mid-gap
  2. B
    Near valence band
  3. C
    Near conduction band
  4. D
    Outside the band gap
Question 32Single Answer
Which material is a direct band-gap semiconductor?
  1. A
    Gallium Arsenide
  2. B
    Germanium
  3. C
    Silicon
  4. D
    Tin
Question 33Single Answer
Indirect band-gap semiconductors require phonon interaction because?
  1. A
    Charge neutrality
  2. B
    Energy conservation
  3. C
    Momentum conservation
  4. D
    Thermal equilibrium
Question 34Single Answer
Band gap of silicon at room temperature is approximately?
  1. A
    0.66 eV
  2. B
    0.72 eV
  3. C
    1.43 eV
  4. D
    1.12 eV
Question 35Single Answer
Increase in temperature causes band gap of semiconductor to?
  1. A
    Increase
  2. B
    Decrease
  3. C
    Remain constant
  4. D
    Become zero
Question 36Single Answer
Electrical conductivity of intrinsic semiconductor depends mainly on?
  1. A
    Doping
  2. B
    Crystal size
  3. C
    Mobility only
  4. D
    Temperature
Question 37Single Answer
In n-type semiconductor, majority carriers are?
  1. A
    Holes
  2. B
    Excitons
  3. C
    Ions
  4. D
    Electrons
Question 38Single Answer
Density of states in conduction band increases with?
  1. A
    Decrease in energy
  2. B
    Cube of energy
  3. C
    Square root of energy
  4. D
    Linear energy
Question 39Single Answer
Fermi level shifts towards conduction band in?
  1. A
    p-type material
  2. B
    Intrinsic material
  3. C
    n-type material
  4. D
    Insulator
Question 40Single Answer
Semiconductor becomes degenerate when?
  1. A
    Lightly doped
  2. B
    Undoped
  3. C
    Heavily doped
  4. D
    Heated
Question 41Single Answer
Built-in potential of PN junction depends on?
  1. A
    Current
  2. B
    Temperature and doping
  3. C
    Area
  4. D
    Frequency
Question 42Single Answer
Depletion region width increases with?
  1. A
    Reverse bias
  2. B
    Forward bias
  3. C
    Zero bias
  4. D
    Temperature rise
Question 43Single Answer
Reverse saturation current is mainly due to?
  1. A
    Majority carriers
  2. B
    Drift only
  3. C
    Recombination
  4. D
    Minority carriers
Question 44Single Answer
Zener breakdown occurs due to?
  1. A
    Avalanche multiplication
  2. B
    Tunneling effect
  3. C
    Thermal runaway
  4. D
    Punch-through
Question 45Single Answer
Zener breakdown is dominant in diodes with?
  1. A
    Wide depletion region
  2. B
    Light doping
  3. C
    Heavy doping
  4. D
    Large junction area
Question 46Single Answer
Avalanche breakdown occurs due to?
  1. A
    Impact ionization
  2. B
    Tunneling
  3. C
    Thermal breakdown
  4. D
    Recombination
Question 47Single Answer
Zener diode is primarily used as?
  1. A
    Rectifier
  2. B
    Amplifier
  3. C
    Voltage regulator
  4. D
    Switch
Question 48Single Answer
Dynamic resistance of diode in forward bias is?
  1. A
    Very high
  2. B
    Infinite
  3. C
    Small but finite
  4. D
    Zero
Question 49Single Answer
Cut-in voltage for silicon diode is approximately?
  1. A
    0.2 V
  2. B
    0.3 V
  3. C
    1.2 V
  4. D
    0.7 V
Question 50Single Answer
Transition capacitance of diode is maximum at?
  1. A
    Forward bias
  2. B
    High reverse bias
  3. C
    Zero bias
  4. D
    Breakdown
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