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Latest CUET PG Nanoelectronics Exam Question (Objective Questions), MCQ in English

Subjects : Nanoelectronics

Question Bank CUET PG Nanoelectronics (MTQP09) Exam - English
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Nanoelectronics

Question 1Single Answer
The two primary mechanisms of charge carrier transport in semiconductors are?
  1. A
    Drift and diffusion
  2. B
    Drift and recombination
  3. C
    Diffusion and generation
  4. D
    Recombination and tunneling
Question 2Single Answer
Drift current is caused by?
  1. A
    Applied electric field
  2. B
    Concentration gradient
  3. C
    Temperature gradient
  4. D
    Magnetic field
Question 3Single Answer
Diffusion current is caused by?
  1. A
    Concentration gradient of carriers
  2. B
    Electric field
  3. C
    Light illumination
  4. D
    Thermal energy only
Question 4Single Answer
The Einstein relation relates?
  1. A
    Diffusion coefficient and mobility
  2. B
    Mobility and lifetime
  3. C
    Diffusion length and mobility
  4. D
    Lifetime and diffusion coefficient
Question 5Single Answer
In thermal equilibrium inside a semiconductor, the net current is?
  1. A
    Zero (drift current = diffusion current)
  2. B
    Equal to drift current
  3. C
    Equal to diffusion current
  4. D
    Infinite
Question 6Single Answer
In forward bias, the potential barrier height of PN junction?
  1. A
    Increases
  2. B
    Decreases
  3. C
    Remains constant
  4. D
    Becomes negative
Question 7Single Answer
In reverse bias, the potential barrier height of PN junction?
  1. A
    Increases
  2. B
    Decreases
  3. C
    Remains constant
  4. D
    Becomes zero
Question 8Single Answer
The ideality factor in real diodes accounts for?
  1. A
    Recombination and generation effects
  2. B
    Only drift current
  3. C
    Only diffusion current
  4. D
    No deviation from ideal
Question 9Single Answer
The reverse saturation current I doubles approximately every?
  1. A
    10C increase in temperature
  2. B
    5C increase
  3. C
    20C increase
  4. D
    1C increase
Question 10Single Answer
The depletion (junction) capacitance of a PN diode is significant in?
  1. A
    Reverse bias condition
  2. B
    Forward bias condition
  3. C
    Zero bias only
  4. D
    Both forward and reverse bias
Question 11Single Answer
The diffusion capacitance in forward-biased diode is proportional to?
  1. A
    Forward current
  2. B
    Reverse current
  3. C
    Depletion width
  4. D
    Zero bias voltage
Question 12Single Answer
The total small-signal capacitance of a forward-biased diode is the sum of?
  1. A
    Depletion capacitance + diffusion capacitance
  2. B
    Only depletion capacitance
  3. C
    Only diffusion capacitance
  4. D
    Gate capacitance
Question 13Single Answer
The dominant capacitance in strongly forward-biased diode is?
  1. A
    Diffusion capacitance
  2. B
    Depletion capacitance
  3. C
    Parasitic capacitance
  4. D
    Stray capacitance
Question 14Single Answer
In reverse bias, the junction capacitance behaves like?
  1. A
    Voltage-variable capacitor (varactor)
  2. B
    Fixed capacitor
  3. C
    Inductor
  4. D
    Resistor
Question 15Single Answer
The minority carrier lifetime t is?
  1. A
    Average time a minority carrier exists before recombination
  2. B
    Transit time across junction
  3. C
    Storage time
  4. D
    Recovery time
Question 16Single Answer
In forward bias, the injected minority carrier concentration decays?
  1. A
    Exponentially away from the junction
  2. B
    Linearly
  3. C
    Parabolically
  4. D
    Remains constant
Question 17Single Answer
The forward current in PN diode is mainly due to?
  1. A
    Minority carrier injection and diffusion
  2. B
    Majority carrier drift
  3. C
    Generation current
  4. D
    Recombination current
Question 18Single Answer
The reverse current in ideal PN diode is?
  1. A
    Very small saturation current I
  2. B
    Large
  3. C
    Zero
  4. D
    Proportional to voltage
Question 19Single Answer
When ideality factor, the current is dominated by?
  1. A
    Recombination in depletion region
  2. B
    Diffusion current
  3. C
    Generation current
  4. D
    Tunneling current
Question 20Single Answer
The varactor diode is heavily used in?
  1. A
    Voltage-controlled tuning circuits
  2. B
    Power rectification
  3. C
    Switching applications
  4. D
    Clamping circuits
Question 21Single Answer
The quality factor Q of varactor diode is highest when?
  1. A
    Reverse bias is high and series resistance is low
  2. B
    Forward bias is applied
  3. C
    Zero bias
  4. D
    Breakdown region
Question 22Single Answer
The PIN diode is preferred in RF applications because?
  1. A
    It has variable RF resistance controlled by DC bias
  2. B
    It has high reverse voltage
  3. C
    It has low forward drop
  4. D
    It has high capacitance
Question 23Single Answer
In PIN diode, when forward biased with high current, the I-region is?
  1. A
    Flooded with carriers → low resistance
  2. B
    Depleted → high resistance
  3. C
    Neutral
  4. D
    Inverted
Question 24Single Answer
The reverse recovery time of a PIN diode is?
  1. A
    Longer than normal PN diode due to I-region
  2. B
    Shorter
  3. C
    Zero
  4. D
    Same as PN diode
Question 25Single Answer
The main application of PIN diode is in?
  1. A
    RF switches, attenuators, phase shifters
  2. B
    Low-frequency rectification
  3. C
    Voltage regulation
  4. D
    High-voltage switching
Question 26Single Answer
The transit time in high-frequency diodes limits?
  1. A
    Maximum operating frequency
  2. B
    Forward voltage
  3. C
    Reverse voltage
  4. D
    Gate current
Question 27Single Answer
The reverse recovery charge Qrr in a diode is?
  1. A
    Gate charge
  2. B
    Forward charge
  3. C
    Leakage charge
  4. D
    Stored charge that must be removed during turn-off
Question 28Single Answer
Fast recovery diodes are specially designed to have?
  1. A
    Very short reverse recovery time
  2. B
    Long recovery time
  3. C
    High forward drop
  4. D
    Low breakdown voltage
Question 29Single Answer
Schottky diodes are majority carrier devices, therefore they have?
  1. A
    No reverse recovery time
  2. B
    Long reverse recovery time
  3. C
    High storage charge
  4. D
    High leakage
Question 30Single Answer
The main limitation of Schottky diode at high temperature is?
  1. A
    Increased reverse leakage current
  2. B
    Decreased forward drop
  3. C
    No leakage
  4. D
    No temperature effect
Question 31Single Answer
The reverse leakage current in Schottky diode is mainly due to?
  1. A
    Thermionic emission over the barrier
  2. B
    Tunneling
  3. C
    Avalanche
  4. D
    Zener
Question 32Single Answer
The drift velocity in high electric field becomes?
  1. A
    Saturated (velocity saturation)
  2. B
    Linearly increasing
  3. C
    Zero
  4. D
    Negative
Question 33Single Answer
In high-level injection, the minority carrier lifetime?
  1. A
    Decreases due to Auger recombination
  2. B
    Increases
  3. C
    Remains constant
  4. D
    Becomes zero
Question 34Single Answer
The high-injection effect in PN diode causes?
  1. A
    Increase in series resistance and decrease in lifetime
  2. B
    Decrease in series resistance
  3. C
    No effect
  4. D
    Increase in capacitance
Question 35Single Answer
The forward voltage drop in high-current diodes increases due to?
  1. A
    High-level injection and series resistance
  2. B
    Low-level injection
  3. C
    Depletion region widening
  4. D
    No drop
Question 36Single Answer
In PN junction at equilibrium, the Fermi level is?
  1. A
    Constant throughout the device
  2. B
    Different in p and n regions
  3. C
    Zero in depletion region
  4. D
    Infinite
Question 37Single Answer
The quasi-Fermi levels in forward bias are?
  1. A
    Separated by qV in the junction region
  2. B
    Same as equilibrium
  3. C
    Zero
  4. D
    Overlapping
Question 38Single Answer
The current in long-base diode is limited by?
  1. A
    Diffusion of minority carriers
  2. B
    Drift of majority carriers
  3. C
    Generation
  4. D
    Recombination in depletion region
Question 39Single Answer
In short-base diode, the current is limited by?
  1. A
    Recombination in quasi-neutral region
  2. B
    Diffusion length
  3. C
    Depletion width
  4. D
    No limitation
Question 40Single Answer
The generation-recombination current dominates in?
  1. A
    Depletion region at low forward bias
  2. B
    High forward bias
  3. C
    Reverse bias
  4. D
    Zero bias
Question 41Single Answer
The surface leakage current in diodes is?
  1. A
    Proportional to surface area and surface recombination velocity
  2. B
    Independent of surface
  3. C
    Zero
  4. D
    Negative
Question 42Single Answer
In high-frequency diodes, the parasitic elements are?
  1. A
    Series resistance Rs and package capacitance Cp
  2. B
    Only Rs
  3. C
    Only Cp
  4. D
    No parasitics
Question 43Single Answer
The cut-off frequency of varactor diode is limited by?
  1. A
    Series resistance and junction capacitance
  2. B
    Forward voltage
  3. C
    Reverse voltage
  4. D
    No limit
Question 44Single Answer
The figure of merit for switching diodes is?
  1. A
    Reverse recovery time trr
  2. B
    Forward voltage drop
  3. C
    Breakdown voltage
  4. D
    Capacitance
Question 45Single Answer
Ultrafast diodes are designed to have?
  1. A
    Very short reverse recovery time (<50 ns)
  2. B
    Long recovery time
  3. C
    High forward drop
  4. D
    Low breakdown
Question 46Single Answer
The soft recovery characteristic in diodes is important to?
  1. A
    Reduce EMI and voltage spikes
  2. B
    Increase EMI
  3. C
    Increase switching loss
  4. D
    No importance
Question 47Single Answer
In power diodes, the reverse recovery softness factor S is?
  1. A
    tb / ta (ratio of decay times)
  2. B
    ta / tb
  3. C
    ta + tb
  4. D
    ta x tb
Question 48Single Answer
The stored charge Qrr in power diode is proportional to?
  1. A
    Forward current and carrier lifetime
  2. B
    Reverse voltage
  3. C
    Temperature
  4. D
    No charge
Question 49Single Answer
In high-voltage power diodes, the structure is?
  1. A
    PIN structure
  2. B
    PN structure
  3. C
    Schottky structure
  4. D
    MOS structure
Question 50Single Answer
The breakdown voltage of power diodes can reach?
  1. A
    Several kV
  2. B
    Few volts
  3. C
    Tens of volts
  4. D
    Hundreds of mV
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