Question Bank
SET Electronic Science Exam Paper 2 - English
Duration: 120 · Questions: 100 · Max Marks: 100 · Language: 3
Electronic Science
1
In case of varactor diode with hyper-abrupt junction the sensitivity (S) value for
is :
is :2
For an ideal MS contact between a metal and a P-type semi-conductor. The relation between barrier height
is given by :
is given by :3
The Debye Length LD is a characteristic lengh for semi-conductor and is defined as. Where, K is Boltzmann constant, T is temperature in Kelvin, q is unit electronic charge, N is impurity concentration of the substrate in per M³. ϵs is dielectric permittivity of silicon.
4
The depletion layer width at thermal equilibrium for a one-sided abrupt junction is :
5
Number of ways in which a Schottky defect an occur in silicon is given by : Where N = total number of atoms in a crystal of unit volume n5 = number of Schottky defects per unit volume.
6
What would be system pressure of Si – MBE system in order to achieve 5 × 107 cm mean free path (L) of atoms ?
7
Which Plasma Analytical technique involves placement of conducting probe smaller than particle mean free path directly in the plasma ?
8
Which gas is used in reactive plasma for etching all three i.e, silicides, silicon and silicon dioxide ?
9
Consider a circuit as shown in figure :

The circuit is :

The circuit is :
10
The region of convergence of the sequence
is :
is :11
The Fourier series expansion of a periodic function with half wave symmetry contains :
12
The Fourier transform of x* [-n] is :
13
The slew rate for a 741 is 0.5 V/µ second, the combination of maximum frequencies for an undistorted sine-wave output of 10 V peak and 1 V peak are approximately :
14
Which of the following is not a component of basic Phase-Locked Loop (PLL) ?
15
If TJ and TA are junction temp. and ambient temp respectively θJC, θCs and θSA are transistor thermal resistance, insulator thermal resistance and heat sink thermal restance respectively. The equation of maximum power dissipation is given by :
16
If Vref is the output reference value and Vrs is the ideal full-scale output voltage when the digital input are all 1. Which of the following equation is correct ?
17
The final code after encoding data bits 1101 into 7 bit even parity hamming Code is :
18
The A/O gates in which an addition variable or a combination of variables can be included in the logic operation are called :
19
The statement which is not applicable to a More machine :
20
The relationship between revolution per minute(rpm), step per revolution (spr) and steps per second (sps) is given by :
21
What happens if Interrups INTO,TF0 and INT1 are activate at the same time ?
22
In the Register Indirect addressing mode, the effective address of the datum in the base reister or an index register that is specified by the instruction is.
23
RG-U type transmission line has an open circuit impedance of
and a short circuit impedance of
,The value of characteristic impedence is given by :
and a short circuit impedance of
,The value of characteristic impedence is given by :24
An air filled rectangular waveguide of dimension 7 × 3.5 cm² operates in the dominant TE10 mode, The value of phase velocity of the wave in the guide at a frequency of 3.5 GHz is given by :
25
In case of Linear arrays of 'n' isotropic point sources of equal amplitude and spacing, The expression for total electric field at a large distance in the direction, 'θ' , is given by :
26
A sphere of radius r1 = 30 cm has a charge density
Where p0 = 200 pC/m³. The value of total change on the sphere is given by :
Where p0 = 200 pC/m³. The value of total change on the sphere is given by :27
A VSB transmitter that transmits 25% of the other sideband along with wanted sideband, radiates 0.625 kW when the modulation percentage is 60%. If we want to transmit the same message by an AM transmitter then carrier pwoer (in kW) required is :
28
The term dispersion describe the process of :
29
In a FDM system, 10 channels are multiplexed. Each channel having a BW of 50 kHz, if the guard band between the channels are 1 kHz, the minimum bandwidth required for transmission is :
30
The main objective of CELL in a cellular mobile system is :
31
In the following circuit ß is in the range of 8 to 40. Rc = 11 Ω, Vcc = 200 V, VB = 10V. If the VCE (saturation) = 1.0 V and VBe (sat) = 1.5 V, over drive factor = 5. The value of power loss in the transistor is given by :
​
​32
A three phase four pole induction motor is operating on an input frequency of 75 Hz and slip of 4%. If the rotor resistance of the machine is 1Ω. the torque developed by the motor is given by : (Assume the operating voltage is 415V, assuming stator voltage drop = 0) :
33
Insertion of negative feedback in control system affects :
34
For the following First Order Syatem.The value steady state error is given by :
​
​35
A dual-slope integrating type of A/D converter has an integrating capacitor of 0.1 µF and a restance of 100 kΩ. If the reference voltage is 2 V, and the output of the integrator is not to exceed to 10V, the value of maximum time the reference voltage can be integrated is :
36
The velocity transducer consists of a moving coil suspended in the magnetic field of a permanent magnet, It is not used for measurement of velocities developed in a :
37
Which of the following statements is not correct about a CPLD (Complex Progammable Logic Device) ?
38
What is not the source of Error in a Thermocouple transducer ?
39
Which is not the important characteristics of thermoistors that make them extremely useful in measurement and control applications ?
40
Currents in the three terminals of a transistor are mostly diffusion currents which are related by the minority carrier distribution in the base region. Which of the following statements are correct ?
(a) The applied voltages control the boundary densities through the term exp (qV/kT)
(b) The base current is the difference between the emitter and collector currents
(c) In order to maximize emitter reistance, the emitter contact is usually made directly on top of the emitter
(d) Emitter Bandgap narrowing increases current gain
​(e) Emitter and collector currents are given by the minority density gradients at the junction boundaries Choose the most appropriate answer from the options given below :
(a) The applied voltages control the boundary densities through the term exp (qV/kT)
(b) The base current is the difference between the emitter and collector currents
(c) In order to maximize emitter reistance, the emitter contact is usually made directly on top of the emitter
(d) Emitter Bandgap narrowing increases current gain
​(e) Emitter and collector currents are given by the minority density gradients at the junction boundaries Choose the most appropriate answer from the options given below :
41
The small signal model of tunnel diode can be represented as :
A.
B.
C.
D.
Where Rs is resistence;
Choose the most appropriate answer from the options given below :
A.

B.

C.

D.

Where Rs is resistence;
Choose the most appropriate answer from the options given below :
42
In which of the following techniques beam of electrons is used as a probe and the secondary radiation is X-ray
(a) LEED
(b) EMP
(c) TEM
(d) STEM
​(e) EELS
​Choose the correct answer from the options given below :
(a) LEED
(b) EMP
(c) TEM
(d) STEM
​(e) EELS
​Choose the correct answer from the options given below :
43
Which metals or alloys amongst the following, do not reduce SiO2 and are found to have poor adhesion on SiO2 surfaces.
(a) W
(b) Mo
(c) AI
(d) TiN
(e) WSi2
Choose the correct answer from the options given below :
(a) W
(b) Mo
(c) AI
(d) TiN
(e) WSi2
Choose the correct answer from the options given below :
44
Which of the following gases commonly used in CVD are pyraphoric, toxic and flammable ?
(a) Phosphine
(b) Argon
(c) Nitrogen Oxide
(d) Silane
(e) Nitrogen
​Choose the most appropriate answer from the options given below :
(a) Phosphine
(b) Argon
(c) Nitrogen Oxide
(d) Silane
(e) Nitrogen
​Choose the most appropriate answer from the options given below :
45
Consider the circuit shown in the figure


46
Which of the following statments regarding tree are correct ?
(a) All the links of a tree together does not constitute the complement of the corresponsing tree
(b) A conncected subgraph of a connected graph is a tree if there exist (n – 1) nodes of the group
(c) A connected subgraph of a connected graph is a tree if there exists many paths between any pair of nodes in it
(d) The number of terminal nodes or end vertices of every tree are atleast two
​(e) Every connected graph has atleast one tree Choose the correct answer from the options given below :
(a) All the links of a tree together does not constitute the complement of the corresponsing tree
(b) A conncected subgraph of a connected graph is a tree if there exist (n – 1) nodes of the group
(c) A connected subgraph of a connected graph is a tree if there exists many paths between any pair of nodes in it
(d) The number of terminal nodes or end vertices of every tree are atleast two
​(e) Every connected graph has atleast one tree Choose the correct answer from the options given below :
47
Which of the following statements are not correct ?
(a) Precision rectifiers use positive feedback to compensate for the forward drop of the diodes
(b) Precision peak detector used a capacitor to effectively lenghten the duration of the peaks
(c) Limiters may be thought of as programmable signal clippers
(d) In order to improve performace of comparators negative feedback may be used
​(e) There are two basic approaches for realizing a desing : (1) using zener diodes and (2) using biased-signal diode network Choose the most appropriate answer from the options given below :
(a) Precision rectifiers use positive feedback to compensate for the forward drop of the diodes
(b) Precision peak detector used a capacitor to effectively lenghten the duration of the peaks
(c) Limiters may be thought of as programmable signal clippers
(d) In order to improve performace of comparators negative feedback may be used
​(e) There are two basic approaches for realizing a desing : (1) using zener diodes and (2) using biased-signal diode network Choose the most appropriate answer from the options given below :
48
The network formed by resistors and capacitors for modifying the rate of change of gain and the phase hift is called a compensating network. Which of the following statements are not correct ?
(a) The main purpose of a compensating network is to modify the performance of op-amp circuit over the desired frequency range
(b) There are two types of op-amps : internally compensated and externally compensated
(c) 741 C is an externally compensated op-amp while 709 C is internally compensated op-amp
(d) The phase lag and phase lead are most commonly used compensating networks in op-amps
​(e) Phase lag contributes a positive phase angle and phase lead a negative phase angle
Choose the most appropriate answer from the options given below :
(a) The main purpose of a compensating network is to modify the performance of op-amp circuit over the desired frequency range
(b) There are two types of op-amps : internally compensated and externally compensated
(c) 741 C is an externally compensated op-amp while 709 C is internally compensated op-amp
(d) The phase lag and phase lead are most commonly used compensating networks in op-amps
​(e) Phase lag contributes a positive phase angle and phase lead a negative phase angle
Choose the most appropriate answer from the options given below :
49
Three major types of programmable logic are SPLD, CPLD and fpga. Each major type have many manufacturer specific subcategories. Some statements are given below related to these programmable logic devices. Which of the following statements are correct ?
​(a) CPLDs have much higher capacity than SPLDs
(b) FPGAs are similar to CPLDs in their internal organization
(c) Two basic classes of FPGAs are course grained and fine grained (d) Fine grained FPGA has large logic blocks whle course-grained FPGA has much smaller logic blocks
(e) FPGAs come in package and ranging less than 1000 pins
Choose the most appropriate answer from the options given below :
​(a) CPLDs have much higher capacity than SPLDs
(b) FPGAs are similar to CPLDs in their internal organization
(c) Two basic classes of FPGAs are course grained and fine grained (d) Fine grained FPGA has large logic blocks whle course-grained FPGA has much smaller logic blocks
(e) FPGAs come in package and ranging less than 1000 pins
Choose the most appropriate answer from the options given below :
50
The performance parameters of a logic family are required for better understanding.The following statements explain the characteristics of Digital logic family. Which of these statements are correct ?
(a) The operating speed of a logic family is determined from its propagation delay
(b) Power dissipation is inverseley proportional to switching frequency and directly proportional to cycle time.
(c) Fan in is defined as maximum number of inputs for a logic gate in a particular logic family
(d) Fan-out is defined as number of dissimilar logic gates driven by a single logic gate
​Choose the most appropriate answer from the options given below :
(a) The operating speed of a logic family is determined from its propagation delay
(b) Power dissipation is inverseley proportional to switching frequency and directly proportional to cycle time.
(c) Fan in is defined as maximum number of inputs for a logic gate in a particular logic family
(d) Fan-out is defined as number of dissimilar logic gates driven by a single logic gate
​Choose the most appropriate answer from the options given below :
51
In case of the parallel adder, the speed with which an addition can be performed is governed by the time required for the carries to propagte or ripple through all the stages of the adder.Which of the following statements are correct ?
(a) The method of speeding up the addition process is based on additional functions of full-adder called carry generate and carry propogation
(b) The look-ahead-carry adder sppeds up the process by eliminating ripple carry delay.
(c) The final sum output of the nth stage is gien by Sn = Pn (+) Cn where Pn = An (+) Bn
(d) The final carry output of nth stage is given by Cn+1 = Gn + Pn Where Gn = An . Bn
Choose the correct answer from the options given below :
(a) The method of speeding up the addition process is based on additional functions of full-adder called carry generate and carry propogation
(b) The look-ahead-carry adder sppeds up the process by eliminating ripple carry delay.
(c) The final sum output of the nth stage is gien by Sn = Pn (+) Cn where Pn = An (+) Bn
(d) The final carry output of nth stage is given by Cn+1 = Gn + Pn Where Gn = An . Bn
Choose the correct answer from the options given below :
52
For the 40-character wide LCD, the upper address range can go as high as :
(a) 0101011
(b) 1000000
(c) 0100111
(d) 1001000
(e) 1011111
​Choose the most appropriate answer from the options given below :
(a) 0101011
(b) 1000000
(c) 0100111
(d) 1001000
(e) 1011111
​Choose the most appropriate answer from the options given below :
53
keyboards are organised in a matrix. The CPU of 8051 accesses both rows and columns through its ports. So, it can access :
(a) 4 × 4 matrix of keys
(b) 8 × 8 matrix of keys
(c) 16 × 16 matrix of keys
(d) 2 × 2 matrix of keys
(e) 32 × 32 matrix of keys
​Choose the most appropriate answer from the options given below :
(a) 4 × 4 matrix of keys
(b) 8 × 8 matrix of keys
(c) 16 × 16 matrix of keys
(d) 2 × 2 matrix of keys
(e) 32 × 32 matrix of keys
​Choose the most appropriate answer from the options given below :
54
For an EM wave ray traversing from air , medium 1 to a conducting Medium 2,Following statements are given :

(a)
(b)
(c)
(d)
(e)
Which of the above are correct ?
Choose the most appropriate answer from the options given below :

(a)

(b)

(c)

(d)

(e)

Which of the above are correct ?
Choose the most appropriate answer from the options given below :
55
A dielectric medium has a relative permittivity ∈r = 6, for this the values of Index of Refraction and Phase velocity are given :
(a) η = 6
(b) η = 2.45
(c) Phase Velocity = 3 × 108 rnls
(d) Phase Velocity = 1.22 × 108 m/s
(e) 32 × 32 matrix of keys
​Choose the most appropriate answer from the options given below :
(a) η = 6
(b) η = 2.45
(c) Phase Velocity = 3 × 108 rnls
(d) Phase Velocity = 1.22 × 108 m/s
(e) 32 × 32 matrix of keys
​Choose the most appropriate answer from the options given below :
56
A plane wave of frequency 2 GHz travelling in air parallel to a flat ground plane with H parallel to the ground plane losses 3 µ W/m² into the ground plane having conductivity σ = 107 Ωm, µr = ϵr = 1. The following data is given :
(a) E = 3.89 V/m
(b) E = 8.98 V/m
(c) H = 10.33 mA/m
(d) H = 3.97 mA/m
​Choose the most appropriate answer from the options given below :
(a) E = 3.89 V/m
(b) E = 8.98 V/m
(c) H = 10.33 mA/m
(d) H = 3.97 mA/m
​Choose the most appropriate answer from the options given below :
57
Which of the following statements about the matched filter in a communication reciever are correct ?
(a) It may produce phase error if synchronization is improper
(b) Its impulse response depends on the signal shape
(c) The characteristics of the matched filter is matched with the transmitted data
(d) It produces inter symbol interference
(e) It measures the correlation between incoming recieved message and its impulse response
​Choose the correct answer from the options given below :
(a) It may produce phase error if synchronization is improper
(b) Its impulse response depends on the signal shape
(c) The characteristics of the matched filter is matched with the transmitted data
(d) It produces inter symbol interference
(e) It measures the correlation between incoming recieved message and its impulse response
​Choose the correct answer from the options given below :
58
Which of the following statements are true ?
(a) A parity check code can detect and correct single bit error
(b) The efficiency of Huffman code is linearly proportional to average entropy
(c) Coding increases the channel bandwidth
(d) Coding increases the information rate
(e) A code dictionary with minumum distance 2 is not capable of error correction
​Choose the correct answer from the options given below :
(a) A parity check code can detect and correct single bit error
(b) The efficiency of Huffman code is linearly proportional to average entropy
(c) Coding increases the channel bandwidth
(d) Coding increases the information rate
(e) A code dictionary with minumum distance 2 is not capable of error correction
​Choose the correct answer from the options given below :
59
Which of the following statements are correct ?
(a) A given source will have maximum entropy if the message produced are statistically independent
(b) As the bandwidth approaches infinity, the channel capacity become zero
(c) For binary transmission the baud rate is always equal to bit rate (d) The mutual information of a channel with independent input and output is constant
(e) Nat is a unit of information
Choose the correct answer from the options given below :
(a) A given source will have maximum entropy if the message produced are statistically independent
(b) As the bandwidth approaches infinity, the channel capacity become zero
(c) For binary transmission the baud rate is always equal to bit rate (d) The mutual information of a channel with independent input and output is constant
(e) Nat is a unit of information
Choose the correct answer from the options given below :
60
A differential transformer :
(a) Is a differential voltage of two secondary windings of a transformer is varied by positioning the magnetic core through an externally applied force
(b) Is used for pressure measurement
(c) Is used for force measurement
(d) Is used for displacement measurement
(e) Is used for position measurement
​Choose the correct answer from the options given below :
(a) Is a differential voltage of two secondary windings of a transformer is varied by positioning the magnetic core through an externally applied force
(b) Is used for pressure measurement
(c) Is used for force measurement
(d) Is used for displacement measurement
(e) Is used for position measurement
​Choose the correct answer from the options given below :
61
The wheatstone bridge is widely used for precision measurement of resistance :
(a) From 1 Ω to few M Ω
(b) Very low resistance
(c) Very high resistance
(d) 1 mΩ – 10 kΩ (e) 0.1 Ω – 100 kΩ
​Choose the correct answer from the options given below :
(a) From 1 Ω to few M Ω
(b) Very low resistance
(c) Very high resistance
(d) 1 mΩ – 10 kΩ (e) 0.1 Ω – 100 kΩ
​Choose the correct answer from the options given below :
62
The Schering brdige, one of the most important AC bridge :
(a) It is used for capacitance measurement
(b) It is used for Phase angle measurement
(c) It is used for inductance measurement
(d) It is used for resistance measurement
​(e) It is used for torque measurement
​Choose the correct answer from the options given below :
(a) It is used for capacitance measurement
(b) It is used for Phase angle measurement
(c) It is used for inductance measurement
(d) It is used for resistance measurement
​(e) It is used for torque measurement
​Choose the correct answer from the options given below :
63
For the unit step response of second order system following statements are given :
(a) Delay time is the time required for the response to reach 60% of the final value in first attempt
(b) Settling time is the time required for the response to reach and stay within (2% or 5%) tolerance band of its final value
(c) Delay time is the time required for the response to reach 50% of the final value in first attempt
(d) Settling time is the time required for the response to reach and stay within 15% of the final value Which of the above are correct .
Choose the correct answer from the options given below :
(a) Delay time is the time required for the response to reach 60% of the final value in first attempt
(b) Settling time is the time required for the response to reach and stay within (2% or 5%) tolerance band of its final value
(c) Delay time is the time required for the response to reach 50% of the final value in first attempt
(d) Settling time is the time required for the response to reach and stay within 15% of the final value Which of the above are correct .
Choose the correct answer from the options given below :
64
A unity feedback system as shown has damping ratio of 0.8 using derivative control. Following parameters are obtained
​
(a) Charactristic equation is s2+1.6s+16=0
(b) ε =0.2(without derivative control)
(c) ε =0.8 (without derivative control)
(d) ω_n=4 rad/sec
Choose the correct answer from the options given below :
​(a) Charactristic equation is s2+1.6s+16=0
(b) ε =0.2(without derivative control)
(c) ε =0.8 (without derivative control)
(d) ω_n=4 rad/sec
Choose the correct answer from the options given below :
65
Match List – I with List – II :
List-I List-II
(Volt-ampere characteristics of tunnel diode) (Observation)
(a) AT peak current Ip corresponding to Vp (i) Resistance becomes and remains positive
(b) If voltage increased beyond Vp (ii) Current reaches Ip (peak current) and increases
(c) When voltage is just more than valley voltage (iii)
Is negative
(d) When voltage is more than peak forward voltage (iv) Slope
is zero
Choose the correct answer from the options given below :
Code :
List-I List-II
(Volt-ampere characteristics of tunnel diode) (Observation)
(a) AT peak current Ip corresponding to Vp (i) Resistance becomes and remains positive
(b) If voltage increased beyond Vp (ii) Current reaches Ip (peak current) and increases
(c) When voltage is just more than valley voltage (iii)
Is negative(d) When voltage is more than peak forward voltage (iv) Slope
is zeroChoose the correct answer from the options given below :
Code :
66
Match List – I with List – II :
List-I List-II
(Diffusion profile measurement technique) (Characteristics)
(a) Capacitance voltage (i) Not suitable for diffusion studies in VLSI process when shallow junction profile are of interest
(b) Differential conductance (ii) Needs Van dc graff generator
(c) Spreading resistance (iii) Two- point probe arrangement
(d) RBS (iv) Concentration near The junction space-charge region at zero bias cannot be measured
Choose the correct answer from the options given below :
Code :
List-I List-II
(Diffusion profile measurement technique) (Characteristics)
(a) Capacitance voltage (i) Not suitable for diffusion studies in VLSI process when shallow junction profile are of interest
(b) Differential conductance (ii) Needs Van dc graff generator
(c) Spreading resistance (iii) Two- point probe arrangement
(d) RBS (iv) Concentration near The junction space-charge region at zero bias cannot be measured
Choose the correct answer from the options given below :
Code :
67
Match List – I with List – II :
List-I List-II
(h parameter) (T parameter)
(a) h11 (i)
(b) h12 (ii)
(c) h21 (iii)
(d) h22 (iv)
Choose the correct answer from the options given below :
Code :
List-I List-II
(h parameter) (T parameter)
(a) h11 (i)

(b) h12 (ii)

(c) h21 (iii)

(d) h22 (iv)

Choose the correct answer from the options given below :
Code :
68
Match List – I with List – II :
List-I List-II
(Configuration) (Equation of Base current)
(a) Fixed Bias (i)
(b) Emitter Bias (ii)
(c) Emitter follower (iii)
(d) Common-base (iv)
Choose the correct answer from the options given below :
Code :
List-I List-II
(Configuration) (Equation of Base current)
(a) Fixed Bias (i)

(b) Emitter Bias (ii)

(c) Emitter follower (iii)

(d) Common-base (iv)

Choose the correct answer from the options given below :
Code :
69
Match List – I with List – II :
List-I List-II
(a) Simplest type of ADC (i) Flash – type ADC
(b) Fastest ADC (ii) Dual-slope type ADC
(c) Slowest ADC (iii) Counter-type ADC
(c) Most widely used ADC (iv) Successive approximation type ADC
Choose the correct answer from the options given below :
Code :
List-I List-II
(a) Simplest type of ADC (i) Flash – type ADC
(b) Fastest ADC (ii) Dual-slope type ADC
(c) Slowest ADC (iii) Counter-type ADC
(c) Most widely used ADC (iv) Successive approximation type ADC
Choose the correct answer from the options given below :
Code :
70
Match List – I with List – II :
List-I List-II
(Interrupt) (ROM location (Hex.)
(a) Reset (i) 001B
(b) Externel hardware int. 0 (INTO) (ii) 0003
(c) Timer 0 interrupt (TFO) (iii) 000B
(d) Timer 1 interrupt (TF1) (iv) 0000
Choose the correct answer from the options given below :
Code :
List-I List-II
(Interrupt) (ROM location (Hex.)
(a) Reset (i) 001B
(b) Externel hardware int. 0 (INTO) (ii) 0003
(c) Timer 0 interrupt (TFO) (iii) 000B
(d) Timer 1 interrupt (TF1) (iv) 0000
Choose the correct answer from the options given below :
Code :
71
Match List – I with List – II :
List-I List-II
(a) Klystron (i) Slow structure
(b) Transfer Electron devices (ii) Bunching
(c) MESFET (iii) Warm electrons
(d) Travelling wave tube (iv) Pinch – off
Choose the correct answer from the options given below :
Code :
List-I List-II
(a) Klystron (i) Slow structure
(b) Transfer Electron devices (ii) Bunching
(c) MESFET (iii) Warm electrons
(d) Travelling wave tube (iv) Pinch – off
Choose the correct answer from the options given below :
Code :
72
Match List – I with List – II :
List-I List-II
(a) DPSK (i) Non coherent detector
(b) AM (ii) Ratio detector
(c) FM (iii) Coherent detector
(d) DSB- SC (iv) Rectifier detector
Choose the correct answer from the options given below :
Code :
List-I List-II
(a) DPSK (i) Non coherent detector
(b) AM (ii) Ratio detector
(c) FM (iii) Coherent detector
(d) DSB- SC (iv) Rectifier detector
Choose the correct answer from the options given below :
Code :
73
Match List – I with List – II :
For Time response of a second order system
List-I List-II
(a) Slower time (i)
(b) Rise time (ii)
(c) Settling time (iii)
(d) Faster time (iv)
Choose the correct answer from the options given below :
Code :
For Time response of a second order system
List-I List-II
(a) Slower time (i)

(b) Rise time (ii)

(c) Settling time (iii)

(d) Faster time (iv)

Choose the correct answer from the options given below :
Code :
74
Match List – I with List – II :
List-I List-II
(symbol) (Value)
(a) da (i) 10-15
(b) d (ii) 10-1
(c) f (iii) 10-18
(d) a (iv) 10
Choose the correct answer from the options given below :
Code :
List-I List-II
(symbol) (Value)
(a) da (i) 10-15
(b) d (ii) 10-1
(c) f (iii) 10-18
(d) a (iv) 10
Choose the correct answer from the options given below :
Code :
75
Arrange the following semiconductor materials on the basis of Enery-Bondgap (E8) from highest to lowest :
(a) ZnSe
(b) InAs
(c) CdTe
(d) Ge
(e) InP
​Choose the correct answer from the options given below :
(a) ZnSe
(b) InAs
(c) CdTe
(d) Ge
(e) InP
​Choose the correct answer from the options given below :
76
The sequence of first to last step involved in a typical silicon gate n–MOS transistor is :
(a) Gate oxidation
(b) Contact cuts
(c) Patterning SiO2 layer
(d) Implant of diffusion
(e) Patterning of aluminium layer
Choose the correct answer from the options given below :
(a) Gate oxidation
(b) Contact cuts
(c) Patterning SiO2 layer
(d) Implant of diffusion
(e) Patterning of aluminium layer
Choose the correct answer from the options given below :
77
Arrange the Nyquist sampling interval of the signal in descending order: (a) sin c (300 t)
(b) sin c (300 t) + sin c² (300t)
(c) sin c (200 t)
(d) sin c (200 t) + sin c² (200t)
(e) sin c (200 t) + sin c (500t)
​Choose the correct answer from the options given below :
(b) sin c (300 t) + sin c² (300t)
(c) sin c (200 t)
(d) sin c (200 t) + sin c² (200t)
(e) sin c (200 t) + sin c (500t)
​Choose the correct answer from the options given below :
78
Compare the output signal swing of the following power amplifiers :
(a) Class A
(b) Class B
(c) Class AB
(d) Class C
​Choose the correct answer from the options given below :
(a) Class A
(b) Class B
(c) Class AB
(d) Class C
​Choose the correct answer from the options given below :
79
For designing a sequential circuit, the following steps are used as general methodology :
(a) State Assignment and transition table
(b) State diagram
(c) State table
(d) Realization
(e) k–maps and minimal expressions
The sequence of these steps in order of their execution is :
​Choose the correct answer from the options given below :
(a) State Assignment and transition table
(b) State diagram
(c) State table
(d) Realization
(e) k–maps and minimal expressions
The sequence of these steps in order of their execution is :
​Choose the correct answer from the options given below :
80
Arrange the following addresses in ascending order of their priority :
(a) Address for divide error is 0000H
(b) Address for one-byte interrupt instruction, INT is 000CH
(c) Address for overflow, INTO instruction is 0010H
(d) Address for single step trap – TF must be set is 0004H
(e) Address for non maskable interrupt is 0008H
​Choose the correct answer from the options given below :
(a) Address for divide error is 0000H
(b) Address for one-byte interrupt instruction, INT is 000CH
(c) Address for overflow, INTO instruction is 0010H
(d) Address for single step trap – TF must be set is 0004H
(e) Address for non maskable interrupt is 0008H
​Choose the correct answer from the options given below :
81
Following materials are given :
(a) Nickel
(b) Silicon iron
(c) Silver
(d) Cobalt
Arrange them in ascending order of relative permeability .
​Choose the correct answer from the options given below :
(a) Nickel
(b) Silicon iron
(c) Silver
(d) Cobalt
Arrange them in ascending order of relative permeability .
​Choose the correct answer from the options given below :
82
Arrange the bandwidth efficiency of the following M-ary modulation schemes in descending order :
(a) 8-ary PSK
(b) 8-ary FSK
(c) 16-ary FSK
(d) 16-ary PSK
(e) 4-ary FSK
​Choose the correct answer from the options given below :
(a) 8-ary PSK
(b) 8-ary FSK
(c) 16-ary FSK
(d) 16-ary PSK
(e) 4-ary FSK
​Choose the correct answer from the options given below :
83
For a unity feedback syste, open loop, gain is a complex quantity (x + jy) and M circles are drawn for different values of 'M' :
(a) M = 1
(b) M = 2
(c) M = 3
(d) M = 1.6
Arrange the above in ascending order of radius for constant magnitude Loci.
Choose the correct answer from the options given below :
(a) M = 1
(b) M = 2
(c) M = 3
(d) M = 1.6
Arrange the above in ascending order of radius for constant magnitude Loci.
Choose the correct answer from the options given below :
84
Arrange the following in their order of occurance from control grid to fluorescent screen :
(a) Focusing Anode
(b) Horizontal Deflection Plates
(c) Aquadag
(d) Pre-accelerating anode
(e) Vertical deflection plates
​Choose the correct answer from the options given below :
(a) Focusing Anode
(b) Horizontal Deflection Plates
(c) Aquadag
(d) Pre-accelerating anode
(e) Vertical deflection plates
​Choose the correct answer from the options given below :
85
Statement I : For memory capacitors, one of the popular structure is trench capacitor to push memory densities to 64 M bits and beyond.
Statement II : The sides of the trench capacitor n+ and the bottom of the trench has a P+ region, that forms a channel – stop region to isolate adjacent capacitors. In the light of the above statements, choose the correct answer from the options given below.
Statement II : The sides of the trench capacitor n+ and the bottom of the trench has a P+ region, that forms a channel – stop region to isolate adjacent capacitors. In the light of the above statements, choose the correct answer from the options given below.
86
Given below are two statements : One is labelled as Assertion (A) and the other is labelled as Reason (R)
​Assertion (A) : The circuits that are quite stable and relatively to temperature variations have high stability factors.
​Reason (R) : For a particular configuration, if a change in ICO fails to produce a significant change in IC, the stability factor will be quite small. In the light of the above statement, choose the correct answer from the options given below :
​Assertion (A) : The circuits that are quite stable and relatively to temperature variations have high stability factors.
​Reason (R) : For a particular configuration, if a change in ICO fails to produce a significant change in IC, the stability factor will be quite small. In the light of the above statement, choose the correct answer from the options given below :
87
Given below are two statements : One is labelled as Assertion (A) and the other is labelled as Reason (R)
Assertion (A) : In Gunn effect, when electric field is vaired from zero to a threshold value. The drift velocity decreases.
Reason (R) : Beyond the threshold electric field, if the elctric field is increased, the drift velocity is decreased and the diode exhibits negative resitance. In the light of the above statement,
​choose the correct answer from the options given below :
Assertion (A) : In Gunn effect, when electric field is vaired from zero to a threshold value. The drift velocity decreases.
Reason (R) : Beyond the threshold electric field, if the elctric field is increased, the drift velocity is decreased and the diode exhibits negative resitance. In the light of the above statement,
​choose the correct answer from the options given below :
88
Given below are two statements :
Statement I : The Hall effect sensor is included in the magnetic core structure of the current probe.
​Statement II : The Hall effect sensor, assures that the static magnetic flux in the core is exactly zero. In the light of the above statement,
choose the correct answer from the options given below :
Statement I : The Hall effect sensor is included in the magnetic core structure of the current probe.
​Statement II : The Hall effect sensor, assures that the static magnetic flux in the core is exactly zero. In the light of the above statement,
choose the correct answer from the options given below :
89
Given below are two statements : One is labelled as Assertion (A) and the other is labelled as Reason (R) :
Assertion (A) : The Syndrome depends on both the error pattern and the transmitted code word.
Reason (R) : All error patterns that differ by a code word have the same syndrome In the light of the above statements,
​choose the correct answer from the options given below :
Assertion (A) : The Syndrome depends on both the error pattern and the transmitted code word.
Reason (R) : All error patterns that differ by a code word have the same syndrome In the light of the above statements,
​choose the correct answer from the options given below :
90
In a Bipolar Junction transistor, the collector current is :
91
In a semiconductor, the concentration of holes in valence band can be given as :
92
For a semiconductor with electrons and holes as carriers, the resistivity is given as :
93
The Bandgap energy of silicon depends on temperature (T) and can be described as :
94
The depletion layer width at thermal equilibrium for one-sided abrupt p-n junction diode (Where NB = ND or NA) is :
95
The one-dimensional Poisson equation for the surface space charge region at the drain is :
96
The pull-up to pull-down ratio for n-MOS inverter driven by another n-MOS inverter is :
97
IF Do is the frequency factor, E is the activation energy, T is the temperature and K is Boltzmann constant, then the diffusivity deermined over a range of diffusion temperature can be expressed as :
98
The process which offers the possibility of growing high – quality oxides at temperatues even lower than those achieved with the high pressure technique is :
99
During the crystal growth, if A is constant. Ea is the activation energy, T is the absolute temperature and k is Boltzmann's constant, then the concentration of point defects can be expressed as :
100
For a periodic singnal f(t) satisfying Dirichlet conditions then the Fourier series consist of :
​(infinite)
resistor is 2A
​