Band gap of silicon at room temperature is approximately?
A
0.66 eV
B
0.72 eV
C
1.43 eV
D
1.12 eV
Question 30Single Answer
Increase in temperature causes band gap of semiconductor to?
A
Increase
B
Decrease
C
Remain constant
D
Become zero
Question 31Single Answer
Electrical conductivity of intrinsic semiconductor depends mainly on?
A
Doping
B
Crystal size
C
Mobility only
D
Temperature
Question 32Single Answer
In n-type semiconductor, majority carriers are?
A
Holes
B
Excitons
C
Ions
D
Electrons
Question 33Single Answer
Density of states in conduction band increases with?
A
Decrease in energy
B
Cube of energy
C
Square root of energy
D
Linear energy
Question 34Single Answer
Fermi level shifts towards conduction band in?
A
p-type material
B
Intrinsic material
C
n-type material
D
Insulator
Question 35Single Answer
Semiconductor becomes degenerate when?
A
Lightly doped
B
Undoped
C
Heavily doped
D
Heated
Question 36Single Answer
Built-in potential of PN junction depends on?
A
Current
B
Temperature and doping
C
Area
D
Frequency
Question 37Single Answer
Depletion region width increases with?
A
Reverse bias
B
Forward bias
C
Zero bias
D
Temperature rise
Question 38Single Answer
Reverse saturation current is mainly due to?
A
Majority carriers
B
Drift only
C
Recombination
D
Minority carriers
Question 39Single Answer
Zener breakdown occurs due to?
A
Avalanche multiplication
B
Tunneling effect
C
Thermal runaway
D
Punch-through
Question 40Single Answer
Zener breakdown is dominant in diodes with?
A
Wide depletion region
B
Light doping
C
Heavy doping
D
Large junction area
Question 41Single Answer
Avalanche breakdown occurs due to?
A
Impact ionization
B
Tunneling
C
Thermal breakdown
D
Recombination
Question 42Single Answer
Zener diode is primarily used as?
A
Rectifier
B
Amplifier
C
Voltage regulator
D
Switch
Question 43Single Answer
Dynamic resistance of diode in forward bias is?
A
Very high
B
Infinite
C
Small but finite
D
Zero
Question 44Single Answer
Cut-in voltage for silicon diode is approximately?
A
0.2 V
B
0.3 V
C
1.2 V
D
0.7 V
Question 45Single Answer
Transition capacitance of diode is maximum at?
A
Forward bias
B
High reverse bias
C
Zero bias
D
Breakdown
Question 46Single Answer
Ripple factor of full-wave rectifier is?
A
0.348
B
1.21
C
0.816
D
0.482
Question 47Single Answer
Efficiency of ideal full-wave rectifier is?
A
40.6%
B
81.2%
C
50%
D
90%
Question 48Single Answer
PIV of diode in center-tap full-wave rectifier is?
A
2Vm
B
Vm
C
Vm/2
D
4Vm
Question 49Single Answer
Clipper circuits are used to?
A
Shift DC level
B
Rectify AC
C
Amplify signal
D
Remove unwanted signal portions
Question 50Single Answer
Clamping circuit is also known as?
A
Limiter
B
Regulator
C
Rectifier
D
Restorer
Important Questions Package
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Electronics
Question 51Single Answer
Positive clamper shifts signal?
A
Symmetrically
B
Downwards
C
Upwards
D
Removes DC
Question 52Single Answer
Series clipper clips signal when diode is?
A
Forward biased
B
Shorted
C
Reverse biased
D
Open
Question 53Single Answer
Shunt clipper clips signal by?
A
Changing phase
B
Blocking input
C
Increasing frequency
D
Short-circuiting output
Question 54Single Answer
In half-wave rectifier, conduction angle is?
A
90°
B
360°
C
270°
D
180°
Question 55Single Answer
Filtering in rectifier reduces?
A
DC value
B
Load current
C
Efficiency
D
Ripple
Question 56Single Answer
Small signal model is valid when signal amplitude is?
A
Large
B
Comparable to DC
C
Zero
D
Very small
Question 57Single Answer
Incremental resistance of diode decreases with?
A
Decrease in current
B
Increase in current
C
Temperature decrease
D
Voltage decrease
Question 58Single Answer
Diode capacitance becomes significant at?
A
DC
B
High frequency
C
Low frequency
D
Audio frequency
Question 59Single Answer
Diffusion capacitance depends on?
A
Reverse voltage
B
Junction area
C
Temperature only
D
Stored charge
Question 60Single Answer
In active region of BJT?
A
Both junctions forward biased
B
E-B forward, C-B reverse biased
C
Both junctions reverse biased
D
E-B reverse, C-B forward biased
Question 61Single Answer
BJT is a?
A
Current-controlled device
B
Voltage-controlled device
C
Power-controlled device
D
Frequency-controlled device
Question 62Single Answer
Base width modulation is also known as?
A
Hall effect
B
Early effect
C
Miller effect
D
Skin effect
Question 63Single Answer
Collector current in BJT mainly depends on?
A
Collector voltage
B
Temperature only
C
Base current
D
Load resistance
Question 64Single Answer
Leakage current in BJT increases with?
A
Decrease in temperature
B
Increase in base current
C
Increase in temperature
D
Reverse bias decrease
Question 65Single Answer
Cutoff region corresponds to?
A
Switch ON
B
Switch OFF
C
Amplification
D
Breakdown
Question 66Single Answer
Saturation region corresponds to?
A
Amplification
B
Cutoff
C
Breakdown
D
Switch ON
Question 67Single Answer
JFET is a?
A
Bipolar device
B
Optoelectronic device
C
Unipolar device
D
Power device
Question 68Single Answer
Control terminal in JFET is?
A
Drain
B
Source
C
Body
D
Gate
Question 69Single Answer
JFET operates with gate junction?
A
Forward biased
B
Zero biased
C
Reverse biased
D
Alternately biased
Question 70Single Answer
Pinch-off voltage is the voltage at which?
A
Drain current is zero
B
Breakdown occurs
C
Gate current flows
D
Channel is fully depleted
Question 71Single Answer
Drain current in saturation region is independent of?
A
VGS
B
VDS
C
Channel width
D
Mobility
Question 72Single Answer
Shockley equation applies to?
A
BJT
B
MOSFET
C
Diode
D
JFET
Question 73Single Answer
Transconductance of JFET decreases with?
A
Increasing VGS
B
Decreasing VGS
C
Increasing ID
D
Increasing VDS
Question 74Single Answer
JFET input resistance is?
A
Low
B
Very high
C
Moderate
D
Zero
Question 75Single Answer
Drain resistance rd is defined in?
A
Ohmic region
B
Cutoff
C
Saturation region
D
Breakdown
Question 76Single Answer
n-channel JFET has higher conductivity than p-channel due to?
A
Hole mobility
B
Doping
C
Electron mobility
D
Area
Question 77Single Answer
MOSFET is a?
A
Current-controlled device
B
Voltage-controlled device
C
Power-controlled device
D
Frequency-controlled device
Question 78Single Answer
Insulating layer in MOSFET is?
A
Silicon
B
Germanium
C
Silicon dioxide
D
Gallium arsenide
Question 79Single Answer
Enhancement MOSFET requires?
A
Zero gate voltage
B
Negative gate voltage
C
Positive gate voltage
D
Reverse bias
Question 80Single Answer
Depletion MOSFET can operate in?
A
Enhancement mode only
B
Depletion mode only
C
Both depletion and enhancement modes
D
Cutoff only
Question 81Single Answer
Threshold voltage is minimum VGS needed to?
A
Cause breakdown
B
Saturate device
C
Induce channel
D
Increase mobility
Question 82Single Answer
Channel length modulation in MOSFET is analogous to?
A
Early effect
B
Zener effect
C
Miller effect
D
Hall effect
Question 83Single Answer
MOSFET gate current is ideally?
A
High
B
Zero
C
Moderate
D
Variable
Question 84Single Answer
Body effect causes threshold voltage to?
A
Decrease
B
Remain same
C
Increase
D
Become zero
Question 85Single Answer
Drain current in saturation region depends on?
A
VDS
B
VGS
C
Load resistance
D
Frequency
Question 86Single Answer
MOSFETs are preferred in ICs because of?
A
High power
B
Low input impedance
C
Scalability and low power
D
High leakage
Question 87Single Answer
PN junction at equilibrium has net current?
A
Forward
B
Reverse
C
Zero
D
Maximum
Question 88Single Answer
Reverse recovery time affects diode operation at?
A
High frequency
B
Low frequency
C
DC
D
Audio frequency
Question 89Single Answer
For ideal diode, forward resistance is?
A
Variable
B
Infinite
C
Finite
D
Zero
Question 90Single Answer
Maximum efficiency of half-wave rectifier is?
A
81.2%
B
40.6%
C
50%
D
100%
Question 91Single Answer
Ripple frequency of full-wave rectifier is?
A
f
B
2f
C
f/2
D
4f
Question 92Single Answer
Capacitor filter reduces ripple by?
A
Charging and discharging
B
Increasing load current
C
Increasing PIV
D
Reducing frequency
Question 93Single Answer
Base current in BJT controls?
A
Collector current
B
Collector voltage
C
Emitter voltage
D
Power dissipation
Question 94Single Answer
BJT input resistance is lowest in?
A
CB
B
CE
C
CC
D
All same
Question 95Single Answer
JFET operates in ohmic region when?
A
VDS is large
B
VDS is small
C
VGS = VP
D
Channel pinched
Question 96Single Answer
MOSFET transconductance increases with?
A
Channel length
B
Gate oxide thickness
C
Gate overdrive
D
Drain voltage
Question 97Single Answer
Thermal runaway is major problem in?
A
BJTs
B
Diodes
C
JFETs
D
MOSFETs
Question 98Single Answer
MOSFET is less prone to thermal runaway due to?
A
Low current
B
Positive temperature coefficient
C
High resistance
D
Insulation
Question 99Single Answer
PN junction capacitance decreases with?
A
Increase in forward bias
B
Increase in reverse bias
C
Temperature increase
D
Doping increase
Question 100Single Answer
Zener diode used as regulator must operate in?
A
Forward region
B
Reverse breakdown
C
Cutoff
D
Saturation
Question 101Single Answer
For clipping at specific level, we use?
A
Zener diode
B
LED
C
Tunnel diode
D
Varactor
Question 102Single Answer
JFET drain current at VGS = 0 is?
A
Zero
B
IDSS
C
VP
D
gm
Question 103Single Answer
MOSFET channel exists physically in?
A
Depletion MOSFET at VGS = 0
B
Enhancement MOSFET at VGS = 0
C
Both
D
None
Question 104Single Answer
Output resistance of MOSFET is due to?
A
Channel length modulation
B
Gate leakage
C
Body effect
D
Oxide thickness
Question 105Single Answer
BJT collector current doubles approximately for?
A
1°C rise
B
20°C rise
C
10°C rise
D
50°C rise
Question 106Single Answer
JFET cutoff occurs when?
A
VGS = VP
B
VGS = 0
C
VDS = VP
D
VDS = 0
Question 107Single Answer
Diode current equation is exponential because of?
A
Drift
B
Tunneling
C
Recombination
D
Diffusion
Question 108Single Answer
Rectifier efficiency improves by using?
A
Half-wave rectifier
B
Clipper
C
Bridge rectifier
D
Clamper
Question 109Single Answer
BJT collector current is proportional to?
A
Emitter current
B
Base current
C
Neither
D
Both
Question 110Single Answer
JFET has better noise performance than BJT due to?
A
Majority carrier operation
B
High gain
C
Low voltage
D
High current
Question 111Single Answer
MOSFET gate oxide breakdown leads to?
A
Open circuit
B
Threshold shift
C
Reduced gain
D
Permanent damage
Question 112Single Answer
Zener impedance should be?
A
High
B
Low
C
Infinite
D
Variable
Question 113Single Answer
Diode clipping level can be shifted using?
A
Biasing voltage
B
Capacitor
C
Inductor
D
Resistor
Question 114Single Answer
PN junction equilibrium occurs when?
A
No current flows
B
Drift current > diffusion
C
Diffusion > drift
D
Drift current = diffusion current
Question 115Single Answer
MOSFET body terminal is usually connected to?
A
Gate
B
Drain
C
Source
D
Load
Question 116Single Answer
BJT emitter efficiency increases with?
A
Heavy emitter doping
B
Light base doping
C
Both
D
Neither
Question 117Single Answer
Reverse recovery time is critical in?
A
Switching applications
B
Low frequency rectifiers
C
Audio amplifiers
D
DC circuits
Question 118Single Answer
JFET pinch-off does not mean?
A
Channel closed completely
B
Saturation region
C
Constant current
D
Depletion
Question 119Single Answer
The Einstein relation connects diffusion coefficient with?